Comment on ‘‘Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure’’ [Appl. Phys. Lett. 61, 2308 (1992)]-Reference-Cited by-同舟云学术

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Comment on ‘‘Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure’’ [Appl. Phys. Lett. 61, 2308 (1992)]

Published:1994-01-31 Issue:5 Volume:64 Page:667-667
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vuong T. H. H.,Reynolds C. L.,Singleton J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.111083

Reference3 articles.

1. Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure

2. A novel mechanism for parallel conduction in GaAs-(Ga,Al)As heterojunctions

3. Impact of interface impurities on heterostructure field-effect transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures;physica status solidi (c);2009-01-20

2. The proximity effect of the regrowth interface on two-dimensional electron density in strained Si;Applied Physics Letters;2008-03-17

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