Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4874804
Reference11 articles.
1. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
2. Ultrafast dynamics of nonlinear absorption in low‐temperature‐grown GaAs
3. Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy
4. Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
5. All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths
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