Linear photon upconversion of 400meV in an AlGaInP∕GaInP quantum well heterostructure to visible light at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2195094
Reference17 articles.
1. Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface
2. Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures
3. High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
4. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces
5. Interface-induced conversion of infrared to visible light at semiconductor interfaces
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