On the impact of indium distribution on the electronic properties in InGaN nanodisks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4915117
Reference25 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
4. Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon
5. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
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1. Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires;Applied Physics Letters;2017-04-17
2. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting;Nano Letters;2017-02-14
3. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena;Progress in Quantum Electronics;2016-09
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