Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1385588
Reference10 articles.
1. The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers
2. Free carrier absorption and lifetime mapping in 4H SiC epilayers
3. Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
4. Intrinsic SiC/SiO2 Interface States
5. Auger recombination in 4H-SiC: Unusual temperature behavior
Cited by 61 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving the efficiency and stability of betavoltaic batteries based on understanding efficiency fluctuations and gaps with theoretical limits;Applied Physics Letters;2024-08-12
2. Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime;Materials Science in Semiconductor Processing;2024-06
3. Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions;Japanese Journal of Applied Physics;2024-01-01
4. 4H-SiC Auger recombination coefficient under the high injection condition;Japanese Journal of Applied Physics;2023-01-10
5. Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations;physica status solidi (a);2022-12-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3