Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124516
Reference5 articles.
1. Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
2. High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
3. Heavy arsenic doping of silicon grown by atmospheric‐pressure chemical vapor deposition at low temperatures
4. Control of n‐Type Dopant Transitions in Low‐Temperature Silicon Epitaxy
5. Memory Effect in RTCVD Epitaxy of Si and SiGe
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1. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy;ACS Nano;2020-03-06
2. Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application;Journal of The Electrochemical Society;2010
3. Mechanisms of diffusion-enhanced thermal stability of Si/Si1−xGex/Si heterostructures grown by chemical vapor deposition;Journal of Crystal Growth;2004-01
4. Abrupt Phosphorus Profiles in Si;Journal of The Electrochemical Society;2003
5. Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition;Materials Science and Engineering: B;2002-02
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