Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Phosphorous doping in low temperature silicon molecular beam epitaxy
2. High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
3. Sharp phosphorus spikes in silicon grown by fast gas‐switching chemical vapor deposition at reduced and atmospheric pressure
4. Control of n‐Type Dopant Transitions in Low‐Temperature Silicon Epitaxy
5. Phosphorus doping in low-pressure silicon selective epitaxial growth
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1. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application;Nanoscale Research Letters;2020-12
2. Selective Digital Etching of Silicon–Germanium Using Nitric and Hydrofluoric Acids;ACS Applied Materials & Interfaces;2020-09-24
3. Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices;Thin Solid Films;2012-02
4. Experimental and modeling of fixed-bed reactor for yellow phosphorous tail gas purification over impregnated activated carbon;Chemical Engineering Journal;2008-04-15
5. Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure;Applied Surface Science;2004-03
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