Capless annealing of InP for metal‐insulator‐semiconductor field‐effect transistor applications-Reference-Cited by-同舟云学术

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Capless annealing of InP for metal‐insulator‐semiconductor field‐effect transistor applications

Published:1984-09 Issue:5 Volume:45 Page:532-534
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pande K. P.,Nair V. R. K.,Aina O.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95304

Reference15 articles.

1. The electrical characteristics of InP implanted with the column IV elements

2. Silicon‐ion implantation in InP and annealing with CVD SiO2encapsulation

3. Thin film encapsulants for annealing GaAs and InP

4. N type doping of inp by ion implantation

5. Ion implantation of sulfur in Cr‐doped InP at room temperature

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. $\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor;Japanese Journal of Applied Physics;1995-02-15

2. Ta-Si-N and Si3N4 Encapsulants for InP;MRS Proceedings;1992

3. Chapter 5 InP Substrates: Production and Quality Control;Semiconductors and Semimetals;1990

4. Photoluminescence studies of Si‐implanted InP;Journal of Applied Physics;1989-10-15

5. The electrical and optical behaviour of lamp-annealed Si-implanted InP(Fe);Journal of Physics D: Applied Physics;1988-10-14

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