Temperature dependence of photoreflectance in InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1581003
Reference28 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain
3. Ultranarrow Luminescence Lines from Single Quantum Dots
4. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
5. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
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1. Correlation between the time constant of a photoreflectance signal and the quantum efficiency of a p-n junction;Journal of the Korean Physical Society;2023-03-01
2. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20
3. Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition;Applied Physics Letters;2017-06-26
4. Temperature behavior of Franz-Keldysh oscillation and evaluation of interface electric fields attributed to strain effect of InAs/GaAs quantum dot;Current Applied Physics;2017-01
5. Observation of a complex Franz-Keldysh oscillation in InAs/GaAs quantum dots;Journal of the Korean Physical Society;2016-11
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