Temperature behavior of Franz-Keldysh oscillation and evaluation of interface electric fields attributed to strain effect of InAs/GaAs quantum dot
Author:
Funder
Priority Research Centers Program
National Research Foundation of Korea
Ministry of Education
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference32 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Far-infrared photoconductivity in self-organized InAs quantum dots
3. Digital Logic Gate Using Quantum-Dot Cellular Automata
4. Electrically Driven Single-Photon Source
5. Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence photoreflectance spectroscopy of InAs/GaAs quantum dot solar cell with AlGaAs potential barrier;Journal of the Korean Physical Society;2023-12-18
2. Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs;Journal of Physics D: Applied Physics;2022-07-11
3. Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell;Current Applied Physics;2018-06
4. Photovoltaic conversion efficiency of InN/In x Ga 1-x N quantum dot intermediate band solar cells;Physica B: Condensed Matter;2018-04
5. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01
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