High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting-Reference-Cited by-同舟云学术

High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting

Published:2018-04-28 Issue:16 Volume:123 Page:165101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pastor David¹²,Gandhi Hemi H.¹,Monmeyran Corentin P.³^ORCID,Akey Austin J.⁴,Milazzo Ruggero⁵^ORCID,Cai Yan³,Napolitani Enrico⁵^ORCID,Gwilliam Russell M.⁶^ORCID,Crowe Iain F.⁷^ORCID,Michel Jurgen³,Kimerling L. C.³,Agarwal Anuradha³^ORCID,Mazur Eric¹,Aziz Michael J.¹^ORCID

Affiliation:

1. Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA

2. Departamento de Física Aplicada III, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid 28040, Spain

3. Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139, USA

4. Harvard Center for Nanoscale Systems, Cambridge, Massachusetts 02138, USA

5. Dipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM, Via, Marzolo 8, Padova I-35131, Italy

6. Ion Beam Centre, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

7. Photon Science Institute and School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

U.S. Department of Defense

Defense Threat Reduction Agency

U.S. Air Force

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5012512

Reference44 articles.

1. High-performance Ge-on-Si photodetectors

2. Ge-on-Si laser operating at room temperature

3. An electrically pumped germanium laser

4. Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

5. Direct and indirect band gap room temperature electroluminescence of Ge diodes

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