Low resistance Zn3P2/InP heterostructure Ohmic contact to p‐InP-Reference-Cited by-同舟云学术

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Low resistance Zn3P2/InP heterostructure Ohmic contact to p‐InP

Published:1996-02-12 Issue:7 Volume:68 Page:952-954
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Moon‐Ho,Wang L. C.,Cheng J. Y.,Deng Fei,Lau S. S.,Palmstro/m C. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116109

Reference14 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wet Chemical Treatment and Mg Doping of p‐InP Surfaces for Ohmic Low‐Resistive Metal Contacts;Advanced Engineering Materials;2023-07-28

2. Electroless deposition of palladium films on gallium nitride for Schottky diodes;Journal of Materials Science: Materials in Electronics;2022-02-18

3. Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment;Current Applied Physics;2020-02

4. InP nanowire p-type doping via Zinc indiffusion;Journal of Crystal Growth;2016-10

5. Emissive ZnO@Zn3P2Nanocrystals: Synthesis, Optical, and Optoelectrochemical Properties;Small;2013-04-22

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