Plasma enhanced multistate storage capability of single ZnO nanowire based memory-Reference-Cited by-同舟云学术

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Plasma enhanced multistate storage capability of single ZnO nanowire based memory

Published:2015-01-19 Issue:3 Volume:106 Page:031603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lai Yunfeng¹,Xin Pucong¹,Cheng Shuying¹,Yu Jinling¹,Zheng Qiao¹

Affiliation:

1. School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China

Funder

Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Fujian Province (Fujian Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906416

Reference39 articles.

1. New conduction and reversible memory phenomena in thin insulating films

2. Switching properties of thin Nio films

3. Metal–Oxide RRAM

4. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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