Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors
Author:
Affiliation:
1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060415
Reference53 articles.
1. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2 O3 , and Diamond
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3. Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs
4. Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
5. Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation
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