Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors-Reference-Cited by-同舟云学术

Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors

Published:2021-08-16 Issue:7 Volume:119 Page:071601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hirai Hirohisa¹^ORCID,Miura Yoshinao¹^ORCID,Nakajima Akira¹^ORCID,Harada Shinsuke¹^ORCID,Yamaguchi Hiroshi¹

Affiliation:

1. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060415

Reference53 articles.

1. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2 O3 , and Diamond

2. Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

3. Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

4. Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation

5. Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation

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