Growth mechanism of polycrystalline silicon films from hydrogen-diluted SiCl4 at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1996828
Reference18 articles.
1. Present and future applications of amorphous silicon and its alloys
2. Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
3. Thin-film poly-Si solar cells on glass substrate fabricated at low temperature
4. Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method
5. Development of highly conductiven‐type μc‐Si:H films at low power for device applications
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1. Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments;Nanoscale Research Letters;2015-10-30
2. A high carrier-mobility crystalline silicon film directly grown on polyimide using SiCl4/H2 microwave plasma for flexible thin film transistors;Journal of Materials Chemistry C;2015
3. High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD;RSC Advances;2013
4. Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma;physica status solidi (a);2012-03-07
5. Low-temperature (120°C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H2 gases: Microstructure characterization;Applied Surface Science;2012-01
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