Dislocation scattering effects on electron mobility in InAsSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356244
Reference22 articles.
1. Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys
2. Electron Mobility in Direct-Gap Polar Semiconductors
3. Electrical properties of InAsxSb1−x alloys
4. Electron mobility in InAs1−xSbxand the effect of alloy scattering
5. Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx
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