Passivation and activation of Mg acceptors in heavily doped GaN
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3626461
Reference29 articles.
1. Hole Compensation Mechanism of P-Type GaN Films
2. Activation of p-Type GaN in a Pure Oxygen Ambient
3. Influence of oxygen on the activation of p-type GaN
4. Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
5. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
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