Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4984087
Reference46 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Growth of GaBN ternary solutions by organometallic vapor phase epitaxy
3. MOCVD growth of GaBN on 6H-SiC (0001) substrates
4. Band-Gap Energy and Effective Mass of BGaN
5. Boron alloying in GaN
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