Influence of deep level defects on carrier lifetime in CdZnTe:In-Reference-Cited by-同舟云学术

Influence of deep level defects on carrier lifetime in CdZnTe:In

Published:2015-03-07 Issue:9 Volume:117 Page:094502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Guo Rongrong¹,Jie Wanqi¹,Wang Ning¹,Zha Gangqiang¹,Xu Yadong¹,Wang Tao¹,Fu Xu¹

Affiliation:

1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China

Funder

the China Postdoctoral Science Foundation

the fund of the state key Laboratory of Solidification Processing in NWPU

the National 973 Project of China

the National Instrumentation Program

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914159

Reference40 articles.

1. Cadmium zinc telluride and its use as a nuclear radiation detector material

2. Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors

3. Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector Crystals

4. Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances

5. Trapping properties of cadmium vacancies inCd1−xZnxTe

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