Decay of excess carriers in a two-defect model semiconductor: A time-resolved photoluminescence study
Author:
Affiliation:
1. Ultrafast Nanoscale Dynamics, Institute of Physics, Carl von Ossietzky University of Oldenburg, Oldenburg, Germany
Funder
Bundesministerium für Wirtschaft und Energie
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0065600
Reference79 articles.
1. Carrier lifetimes in silicon
2. Recombination kinetics and stability in polycrystalline Cu(In,Ga)Se2 solar cells
3. Simulation of metastable changes in time resolved photoluminescence of Cu(In,Ga)Se2 thin film solar cells upon light soaking treatment
4. Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
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