Ferroelectric and dielectric properties of Nd3+∕Zr4+ cosubstituted Bi4Ti3O12 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2711415
Reference17 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
2. Fatigue-free ferroelectric capacitors with platinum electrodes
3. Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition
4. Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
5. Fatigue-free samarium-modified bismuth titanate (Bi4−xSmxTi3O12) film capacitors having large spontaneous polarizations
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