Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

Published:2001-04 Issue:7 Volume:89 Page:3934-3938
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Watanabe Takayuki,Saiki Atsushi,Saito Keisuke,Funakubo Hiroshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1352566

Reference16 articles.

1. Ferroelectric Memories

2. Thickness‐dependent electrical characteristics of lead zirconate titanate thin films

4. In situ study of the evolution of domain structure in free-standing polycrystallinePbTiO3thin films under external stress

5. Size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films

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