Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Center for Physical Sciences and Technology, Vilnius LT-01108, Lithuania
3. Department of Physics, Kaunas University of Technology, Kaunas LT-51368, Lithuania
Funder
Marie Sklodowska-Curie Action of the European Union
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4942674
Reference32 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. Statistics of the Recombinations of Holes and Electrons
3. Electron-Hole Recombination in Germanium
4. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
5. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
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