Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352047
Reference13 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
4. Stress-Induced Shape Transition ofCoSi2Clusters on Si(100)
5. Structural and optical characterization of InAs nanostructures grown on high-index InP substrates
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