Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis-Reference-Cited by-同舟云学术

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Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis

Published:1988-11 Issue:9 Volume:64 Page:4765-4767
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Paulus M. J.,Huang C. I.,Bozada C. A.,Cheney M. E.,Dudley S. C.,Stutz C. E.,Evans K. R.,Jones R. L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.341194

Reference16 articles.

1. Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices

2. Optical properties of thin layer AlAs/GaAs superlattices

3. X‐point excitons in AlAs/GaAs superlattices

4. Energy levels and electron wave functions in semiconductor quantum wells having superlattice alloylike material (0.9 nm GaAs/0.9 nm AlGaAs) as barrier layers

5. Photoluminescence of GaAs single quantum wells confined by short‐period all‐binary GaAs/AlAs superlattices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Quantum Structures;Thin Films for Advanced Electronic Devices;1991

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