Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film-Reference-Cited by-同舟云学术

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Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film

Published:2020-11-16 Issue:20 Volume:117 Page:201103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Savchenko M. L.¹²^ORCID,Otteneder M.³,Dmitriev I. A.³⁴,Mikhailov N. N.¹²,Kvon Z. D.¹²,Ganichev S. D.³^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia

2. Novosibirsk State University, 630090 Novosibirsk, Russia

3. Terahertz Center, University of Regensburg, 93040 Regensburg, Germany

4. Ioffe Institute, 194021 St. Petersburg, Russia

Funder

Deutsche Forschungsgemeinschaft

Russian Science Foundation

Volkswagen Foundation

Foundation for Polish Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0025745

Reference33 articles.

1. Topological insulators with inversion symmetry

2. Helical edge and surface states in HgTe quantum wells and bulk insulators

3. Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe

4. Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film

5. Dirac-Screening Stabilized Surface-State Transport in a Topological Insulator

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2. Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 – xCdxTe with an Inverted Energy Spectrum;Bulletin of the Russian Academy of Sciences: Physics;2023-06

3. Interface electronic states contribution into terahertz photoconductivity in structures based on Hg<sub>1 <i>– x</i></sub>Cd<sub><i>x</i></sub>Te with inverted energy spectrum;Известия Российской академии наук. Серия физическая;2023-06-01

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