Interface electronic states contribution into terahertz photoconductivity in structures based on Hg1 – xCdxTe with inverted energy spectrum-Reference-Cited by-同舟云学术

Interface electronic states contribution into terahertz photoconductivity in structures based on Hg1 – xCdxTe with inverted energy spectrum

Published:2023-06-01 Issue:6 Volume:87 Page:843-848
ISSN:0367-6765
Container-title:Известия Российской академии наук. Серия физическая
language:
Short-container-title:Izvestiâ Akademii nauk SSSR. Seriâ fizičeskaâ

Author:

Kazakov A. S.¹,Galeeva A. V.¹,Artamkin A. I.¹,Ikonnikov A. V.¹,Chmyr S. N.¹,Dvoretskiy S. A.²,Mikhailov N. N.²,Bannikov M. I.³,Danilov S. N.⁴,Ryabova L. I.⁵,Khokhlov D. R.¹³

Affiliation:

1. Lomonosov Moscow State University, Physics Department

2. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences

3. Lebedev Physical Institute of the Russian Academy of Sciences

4. University of Regensburg

5. Lomonosov Moscow State University, Chemistry Department

Abstract

We show the differences in the necessarily formed electronic states at the boundaries of the topological phase with a vacuum and with a trivial buffer in the regions of heterojunction in topological materials based on epitaxial films Hg1 – xCdxTe. It was demonstrated that the PT-symmetric terahertz photoconductivity observed in these structures is due precisely to the states in the region of the topological film/trivial buffer (or cap-layer) interfaces.

Publisher

The Russian Academy of Sciences

Reference25 articles.

1. Hasan M.Z., Kane C.L. // Rev. Mod. Phys. 2010. V. 82. P. 3045.

2. Волков Б.А., Панкратов О.А. // Письма в ЖЭТФ. 1985. Т. 42. № 4. С. 145

3. Volkov B.A., Pankratov O.A.// JETP Lett. 1985. V. 42. No. 4. P. 145.

4. Volkov B.A., Pakhomov S.V., Pankratov O.A. // Solid State Commun. 1987. V. 61. No. 2. P. 93.

5. Brüne C., Liu C.X., Novik E.G. et al. // Phys. Rev. Lett. 2011. V. 106. Art. No. 126803.