Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals-Reference-Cited by-同舟云学术

Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Published:2013-02-18 Issue:7 Volume:102 Page:073103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Urbańczyk A.,Keizer J. G.,Koenraad P. M.,Nötzel R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4792700

Reference19 articles.

1. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

2. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

3. Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

4. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition

5. Growth and characterization of single quantum dots emitting at 1300 nm

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