Diffuse x-ray scattering from 311 defects in Si-Reference-Cited by-同舟云学术

Diffuse x-ray scattering from 311 defects in Si

Published:2002-03 Issue:5 Volume:91 Page:2978-2983
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nordlund K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1448669

Reference20 articles.

1. Ion beams in silicon processing and characterization

2. Investigation of radiation damage by X-ray diffraction

3. Diffuse scattering of x rays at grazing angles from near-surface defects in crystals

4. P. Ehrhart and H. Zillgen, in Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty [Mater. Res. Soc. Symp. Proc. MRSPDH469, 175 (1997)].MRSPDH0272-9172

5. X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs

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