Intermetallic compound formation at Cu-Al wire bond interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768835
Reference32 articles.
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5. H. M. Ho, J. Tan, Y. C. Tan, B. H. Toh, and P. Xavier, inProceedings of the 7th Electronics Packaging Technology Conference, Singapore(IEEC, 2005), p. 292.
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1. Cu-Al interfacial formation and kinetic growth behavior during HTS reliability test;Journal of Materials Processing Technology;2019-05
2. New observation of nanoscale interfacial evolution in micro Cu–Al wire bonds by in-situ high resolution TEM study;Scripta Materialia;2016-04
3. Interactive deformation and enhanced ductility of tri-layered Cu/Al/Cu clad composite;Materials Science and Engineering: A;2016-01
4. Microstructural evaluation and failure analysis of Ag wire bonded to Al pads;Microelectronics Reliability;2015-11
5. Comprehensive transmission electron microscopy study on Cu–Al intermetallic compound formation at wire bond interface;Journal of Materials Research;2014-11-25
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