Models for heavy doping effects in gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339777
Reference10 articles.
1. High dopant and carrier concentration effects in gallium arsenide: Band structure and effective intrinsic carrier concentrations
2. Impurity bands and band tailing inn‐type GaAs
3. The modification of electron energy levels by impurity atoms
4. Band gap narrowing due to many-body effects in silicon and gallium arsenide
5. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs
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