Optical spectroscopic study of mechanisms in CCl4plasma etching of Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345663
Reference44 articles.
1. Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactions
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3. Is electronic spin angular momentum conserved in gas-surface interactions? F and F+ with Si(100)
4. Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride
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1. Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures;Ukrainian Journal of Physics;2017-03
2. Optical emission diagnostics of the linear magnetron sputtering discharge;Surface and Coatings Technology;1999-09
3. Sidewall surface chemistry in directional etching processes;Materials Science and Engineering: R: Reports;1998-12
4. Fast Etching of Amorphous and Microcrystalline Silicon by Hot-Filament Generated Atomic Hydrogen;MRS Proceedings;1997
5. Optical Emission Spectroscopy;Optical Diagnostics for Thin Film Processing;1996
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