Very low threshold, carrier-confined diode lasers by a single selective area growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2200471
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1. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21
2. Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe;IEEE Electron Device Letters;2009-03
3. Modification of the anomalous V-shaped and S-shaped temperature dependent photon energy in Al x Ga 1-x N (0;SPIE Proceedings;2008-02-07
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