Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks-Reference-Cited by-同舟云学术

Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks

Published:2015-07-21 Issue:3 Volume:118 Page:034301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kioseoglou J.¹,Pavloudis Th.¹,Kehagias Th.¹,Komninou Ph.¹,Karakostas Th.¹,Latham C. D.²^ORCID,Rayson M. J.²,Briddon P. R.³,Eickhoff M.⁴

Affiliation:

1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

2. Department of Chemistry, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom

3. School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom

4. Institute of Experimental Physics I, Justus-Liebig-University Giessen, D-35392 Giessen, Germany

Funder

STREP project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926757

Reference58 articles.

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4. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

5. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

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