Thermal oxidation of InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327302
Reference11 articles.
1. InP/SiO2MIS structure
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3. A microwave InP/SiO2MISFET
4. n‐indium tin oxide/p‐indium phosphide solar cells
5. Interface formation of deposited insulator layers on GaAs and InP
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1. The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures;Nanosystems: Physics, Chemistry, Mathematics;2017-08-25
2. Direct correlations between XPS analyses and growth film by chronopotentiometry on InP in liquid ammonia (−55 °C);Applied Surface Science;2017-01
3. A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K;Current Applied Physics;2016-01
4. Effect of Modification of an InP Surface by (V2O5 + PbO) AND (NiO + PbO) Oxide Mixtures of Different Compositions on the Thermal Oxidation Process and the Characteristics of the Formed Oxide Films;Russian Physics Journal;2015-04
5. Stability of InP oxide versus solvated electrons in liquid ammonia;Comptes Rendus Chimie;2013-01
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