Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1615313
Reference10 articles.
1. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
2. Investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes for high speed switching
3. Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion
4. Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
5. Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor
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1. High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode;Thin Solid Films;2012-10
2. Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor;Semiconductors;2008-03
3. The Resonant Tunneling in Si1-xGex/Si Superlattices;Solid State Phenomena;2007-03
4. The Meso- Piezo-Resistive Effects in MEMS/NEMS;Solid State Phenomena;2007-03
5. Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application;Solid-State Electronics;2005-03
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