Characterization of stress generated in polycrystalline silicon during thermal oxidation by laser Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356614
Reference7 articles.
1. Characterization of stress in doped and undoped polycrystalline silicon before and after annealing or oxidation with laser raman spectroscopy
2. Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline Silicon
3. Oxidation Site of Polycrystalline Silicon Surface Studied Using Scanning Force/Tunneling Microscope (AFM/STM) in Air
4. Two-dimensional thermal oxidation of silicon—I. Experiments
5. Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides
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