Boron-Silicon complex defects in GaAs: An ab initio study

Author:

Leitsmann R.,Chicker F.,Plänitz Ph.,Radehaus C.,Kretzer U.,Scheffer-Czygan M.,Eichler S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Monte Carlo calculations of cryogenic photodetector readout of scintillating GaAs for dark matter detection;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-11

2. Compound Semiconductor Dopability Assessed via the Maximum Carrier-to-Dopant Ratio and Facilitated by an Algorithmic Determination of the Fixed Doping Level Defect Equilibria;The Journal of Physical Chemistry C;2022-09-22

3. How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-02

4. A complete ab initio thermodynamic and kinetic catalogue of the defect chemistry of hematite α-Fe2O3, its cation diffusion, and sample donor dopants;Physical Chemistry Chemical Physics;2021

5. Vacancy formation in 2D and 3D oxides;2D Nanomaterials for Energy Applications;2020

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