Compound Semiconductor Dopability Assessed via the Maximum Carrier-to-Dopant Ratio and Facilitated by an Algorithmic Determination of the Fixed Doping Level Defect Equilibria-Reference-Cited by-同舟云学术

Compound Semiconductor Dopability Assessed via the Maximum Carrier-to-Dopant Ratio and Facilitated by an Algorithmic Determination of the Fixed Doping Level Defect Equilibria

Published:2022-09-22 Issue:39 Volume:126 Page:16867-16876
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

El-Gibally Hoda¹^ORCID,Allam Nageh K.¹^ORCID,Youssef Mostafa²^ORCID

Affiliation:

1. Energy Materials Laboratory, Department of Physics, The American University in Cairo, AUC Avenue, New Cairo 11835, Egypt

2. Department of Mechanical Engineering, The American University in Cairo, AUC Avenue, New Cairo 11835, Egypt

Funder

American University in Cairo

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c05074

Reference49 articles.

1. Die Elektrodynamik des rotierenden Elektrons

2. Point Defects in Oxides: Tailoring Materials Through Defect Engineering

3. First-principles calculations for point defects in solids

4. The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation

5. On the Theoretical and Experimental Control of Defect Chemistry and Electrical and Photoelectrochemical Properties of Hematite Nanostructures

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