Degradation of GaAs0.9P0.1light‐emitting diodes for optical fiber communication with internal stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327691
Reference24 articles.
1. Degradation of GaAs0.9P0.1LED's Operating at High Current Densities
2. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
3. Thermal Expansion Coefficients and Lattice Parameters between 10° and 65°C in the System GaP-GaAs
4. Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C
5. Effect of a GaAsxP1−x Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs Substrates
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1. Robust Parameter Design for Quality and Reliability Issues Based on Accelerated Degradation Measurements;IEEE Transactions on Reliability;2015-09
2. Degradation of III–V Opto‐Electronic Devices;Journal of The Electrochemical Society;1988-01-01
3. Defect structures in rapidly degraded InGaAsP/InGaP double‐heterostructure lasers;Journal of Applied Physics;1985-03
4. TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy;Japanese Journal of Applied Physics;1984-06-20
5. Degradation of yellow light-emitting GaAs0.1P0.9:N diodes. II. Diffused diodes;Physica Status Solidi (a);1983-07-16
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