Effect of a GaAsxP1−x Transition Zone on the Perfection of GaP Crystals Grown by Deposition onto GaAs Substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658174
Reference18 articles.
1. The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial Deposition
2. Dislocations in GaAs17−xPx
3. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
4. Dislocations and their Relation to Irregularities in Zinc‐Diffused GaAsP p‐n Junctions
5. Coefficient of expansion of gallium arsenide from –62 to 200°C
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