Ion-to-CH3 flux ratio in diamond chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506384
Reference23 articles.
1. Growth of diamond films at low pressure using magneto-microwave plasma CVD
2. Characterization of electron cyclotron resonance plasmas optimized for the deposition of polycrystalline diamond films
3. Lower pressure limit of diamond growth in inductively coupled plasma
4. Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond
5. Independent control of ion energy and flux in plasma-enhanced diamond growth
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1. Properties of Inductively Coupled Radio Frequency CH$_{4}$/H$_{2}$ Plasmas: Experiments and Global Model;Japanese Journal of Applied Physics;2012-04-05
2. Properties of Inductively Coupled Radio Frequency CH4/H2Plasmas: Experiments and Global Model;Japanese Journal of Applied Physics;2012-04-01
3. Made-to-order nanocarbons through deterministic plasma nanotechnology;Nanoscale;2011
4. Ion Chemistry in Cold Plasmas of H2 with CH4 and N2;The Journal of Physical Chemistry A;2007-08-28
5. Insights into sticking of radicals on surfaces for smart plasma nano-processing;Applied Surface Science;2007-06
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