Statistical comparisons of data on band‐gap narrowing in heavily doped silicon: Electrical and optical measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332950
Reference24 articles.
1. Measurement of the minority-carrier transport parameters in heavily doped silicon
2. Heavy doping effects in p-n-p bipolar transistors
3. Measurements of bandgap narrowing in Si bipolar transistors
4. Comparison of band‐gap shrinkage observed in luminescence fromn+‐Si with that from transport and optical absorption measurements
5. Band‐gap narrowing from luminescence inp‐type Si
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