Giant recombination centers in Al0.10Ga0.90As grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109679
Reference12 articles.
1. Minority‐carrier lifetime inn‐Al0.38Ga0.62As
2. Minority‐carrier lifetime in AlxGa1−xAs grown by molecular‐beam epitaxy
3. Electron traps with similar concentrations inn‐type Al0.1Ga0.9As grown by metalorganic chemical vapor deposition
4. Localization in Two-Dimensional Systems in Quantum Hall Regime
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