Electron traps with similar concentrations inn‐type Al0.1Ga0.9As grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335681
Reference14 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Luminescence of AlxGa1−xAs grown by MOVPE
3. Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs
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