Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation-Reference-Cited by-同舟云学术

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Published:2015-02-09 Issue:6 Volume:106 Page:061107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Taoka Noriyuki,Asano Takanori,Yamaha Takashi,Terashima Tatsuya,Nakatsuka Osamu,Costina Ioan,Zaumseil Peter,Capellini Giovanni,Zaima Shigeaki,Schroeder Thomas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908121

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