Modeling of surface gap state passivation and Fermi level de-pinning in solar cells
Author:
Affiliation:
1. Engineering Department, Cambridge University, Cambridge CB3 0FA, United Kingdom
2. Swansea University, Swansea SA2 8PP, United Kingdom
Funder
China Scholarship Council
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5100599
Reference33 articles.
1. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects
2. High-efficiency crystalline silicon solar cells: status and perspectives
3. Carrier population control and surface passivation in solar cells
4. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
5. Passivation and depassivation of silicon dangling bonds at the Si/SiO2interface by atomic hydrogen
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