Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy-Reference-Cited by-同舟云学术

Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

Published:2007-11-12 Issue:20 Volume:91 Page:202116
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Hyo-Jong,Ha Jun-Seok,Lee S. W.,Lee H. J.,Goto H.,Lee S. H.,Cho M. W.,Yao T.,Minegishi T.,Hanada T.,Hong Soon-Ku,Sakata Osami,Lee Jae Wook,Lee Jeong Yong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2815919

Reference13 articles.

1. Substrates for gallium nitride epitaxy

2. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

3. Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

4. Nitridation process of sapphire substrate surface and its effect on the growth of GaN

5. Transmission electron microscopy study of the nitridation of the (0001) sapphire surface

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