Experimental determination of the effects of degenerate Fermi statistics on heavilyp‐doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105152
Reference17 articles.
1. Transistor‐based measurements of electron injection currents inp‐type GaAs doped 1018–1020cm−3
2. The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistors
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4. Modelling of minority-carrier transport in heavily doped silicon emitters
5. Band‐gap narrowing in novel III‐V semiconductors
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1. Composition induced design considerations for InP/GaxIn1−xAs heterojunction bipolar transistors;Solid-State Electronics;2002-12
2. Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistors;Solid-State Electronics;2002-06
3. A comprehensive optical characterization method for high-performance n-p-n AlGaAs-GaAs heterojunction bipolar transistors;IEEE Journal of Selected Topics in Quantum Electronics;1995
4. Effective band‐gap shrinkage in GaAs;Applied Physics Letters;1994-01-24
5. Chapter 5 Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide;Semiconductors and Semimetals;1993
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