Electronic correlation-driven quantum anomalous valley Hall effect in intrinsic ferrovalley FeClBr

Author:

Peng Xuebing1ORCID,Xia Baorui1,Si Mingsu2ORCID,Gao Daqiang1

Affiliation:

1. School of Physical Science and Technology, Lanzhou University 1 , Lanzhou 730000, China

2. School of Materials and Energy, Lanzhou University 2 , Lanzhou 730000, China

Abstract

Both ferrovalley and quantum anomalous valley Hall effect (QAVHE) are practically desirable and inherently fascinating for new-style device applications. However, works realizing the intrinsic ferrovalley and QAVHE in a single ferromagnetic system with a high Curie temperature are still lacking. We predict that monolayer FeClBr exhibits the ferrovalley phase with a substantial valley polarization of 116 meV and high Curie temperature of approximately 565 K. When considering electronic correlation effects, within the range of Ueff = 0.87 eV and Ueff = 1.13 eV, the QAVHE of nontrivial topology is present. A Chern number of C = −1 is confirmed by chiral edge states and an anomalous Hall conductivity. Intriguingly, the emergence of out-of-plane easy magnetization when Ueff < 1.13 eV is conducive to realizing the intrinsic ferrovalley and QAVHE. The QAVHE is also present in monolayers of FeClI and FeBrI. Our study offers potential candidate materials for the advancement of multifunctional quantum devices in topology and valleytronics.

Funder

the National Science Foundation of Chian

Natural Science Foundation of Gansu Province

Gansu Province Education Science and Technology Innovation Youth Doctor Foundation

Publisher

AIP Publishing

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